规格型model | FT-331 | FT-332 | FT-333 | FT-334 | FT-335 | FT-336 |
1.方块电阻范围Sheet resistance | 10-5~2×105Ω/□ | 10-4~2×105Ω/□ | 10-3~2×105Ω/□ | 10-3~2×104Ω/□ | 10-2~2×105Ω/□ | 10-2~2×104Ω/□ |
2.电阻率范围Resistivity | 10-6~2×106Ω-cm | 10-5~2×106Ω-cm | 10-4~2×106Ω-cm | 10-4~2×105Ω-cm | 10-3~2×106Ω-cm | 10-3~2×105Ω-cm |
测试电流范围 Test current | 0.1μA ,1μA,10μA,100μA,1mA,10mA,100mA | 10μA,100μA,1mA,10mA,100mA | 0.1μA ,1μA,10μA,100μA,1mA,10mA,100mA | 10μA,100μA,1mA,10mA, 100mA | 0.1μA,1μA,10μA,100μA,1mA,10mA,100mA | 1μA,10μA,100μA,1mA,10mA,100mA |
4.电流 Current accura | ±0.1% | ±0.2% | ±0.2% | ±0.3% | ±0.3% | ±0.3% |
5.电阻Resistance | ≤0.3% | ≤0.3% | ≤0.3% | ≤0.5% | ≤0.5% | ≤0.5% |
参照标准:
1.硅片电阻率测量的国际标准(ASTM F84).
2.GB/T 1551-2009 《硅单晶电阻率测定方法》.
3.GB/T 1551-1995《硅、锗单晶电阻率测定直流两探针法》.
4.GB/T 1552-1995《硅、锗单晶电阻率测定直流四探针法》.